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| TG2213S TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2213S RF SPDT Switch Antenna switch for Bluetooth class 2, 3 Diversity antenna switching Filter switching for mobile communication Local signal switching Unit: mm Features * * * * Low insertion Loss: LOSS = 0.35dB (typ.) @1.0 GHz = 0.45dB (typ.) @2.5 GHz High isolation: ISL = 24dB (typ.) @1.0 GHz = 22dB (typ.) @2.5 GHz Low voltage operation: VCON = 0 V/2.7 V Small package: sES6 package (1.5 x 1.5 x 0.52 mm) Pin Assignment, Marking (top view) VC1 6 RFcom 5 VC2 4 Block Diagram VC1 6 RFcom 5 VC2 4 JEDEC JEITA TOSHIBA 2-2Q1A UP 1 RF1 2 GND 3 RF2 1 RF1 2 GND 3 RF2 Weight: 2.1 mg (typ.) Maximum Ratings (Ta = 25C) Characteristics Control voltage Input power Total power dissipation Operating temperature range Storage temperature range Symbol VC1 VC2 Pi PD (Note) Topr Tstg Rating 6 6 200 100 -40 to 85 -55 to 125 2 Unit V mW mW C C Note: When mounted on the glass epoxy of 2.5 cm 1.6 t 1 2002-11-14 TG2213S Electrical Characteristics (VCON(Hi) = 2.7 V, VCON(LO) = 0 V, Ta = 25C, Zg = Zl = 50 W) Characteristics Symbol LOSS (1) Insertion loss LOSS (2) LOSS (3) ISL (1) Isolation ISL (2) ISL (3) Input power at 1dB gain compression Control current Switching time Pi1dB ICON tsw Test Circuit 1 1 1 1 1 1 1 3/4 1 Test Condition f = 1.0 GHz, Pi = 0dBmW f = 2.0 GHz, Pi = 0dBmW f = 2.5 GHz, Pi = 0dBmW f = 1.0 GHz, Pi = 0dBmW f = 2.0 GHz, Pi = 0dBmW f = 2.5 GHz, Pi = 0dBmW f = 2.5 GHz no RF signal input Min 3/4 3/4 3/4 20 20 18 12 3/4 3/4 Typ. 0.35 0.40 0.45 24 24 22 17 3/4 50 Max 0.65 0.70 0.75 3/4 3/4 3/4 3/4 0.01 200 dBmW mA ns dB dB Unit Switch Connection VC1 VC2 Switch Condition RFcom - RF1 RFcom - RF2 RF2 Hi Low RFcom RF1 ON OFF RF2 Low Hi RFcom RF1 OFF ON Caution This device is sensitive to electrostatic discharge. When using this device, please ensure that all tools and equipment are earthed. 2 2002-11-14 TG2213S Pin Information Pin 1 2 3 4 5 6 Symbol RF1 GND RF2 VC2 RFcom VC1 Description RF port. When VC1 = Hi and VC2 = Lo, this port is connected to RFcom. An external DC blocking capacitor (C1) is required for internal DC bias blocking. GND port. The distance between this pin and ground pattern should be as short as possible for RF performance. RF port. When VC1 = Lo and VC2 = Hi, this port is connected to RFcom. An external DC blocking capacitors (C1) is required for internal DC bias blocking. Control port. Switching operation is controlled by the voltage of this port. The bypass capacitor (C2) is required. Common RF port. Switching this port to RF1 or RF2 is controlled by "VC1" and "VC2" voltage. An external DC blocking capacitor (C1) is required for internal DC bias blocking. Control port. Switching operation is controlled by the voltage of this port. The bypass capacitor (C2) is required. Test Circuit 1 (RF Test Circuit) RFcom C1 C2 C2 VC1 VC2 Top view RF1 C1 GND C1 RF2 C1: 56 pF C2: 10 pF The values of capacitors depends on the application frequency range and the board pattern layout. Board design and external components should be considered this. Please refer to the Recommend External Parts Table below. Reference External Parts 50 MHz to 300 MHz 1 2 1000 pF 100 pF 300 MHz to 500 MHz 100 pF 10 pF 0.5 GHz to 2.5 GHz 56 pF 10 pF 3 2002-11-14 TG2213S Test Board RFcom C1 C2 VC1 RF1 C1 C2 C1 VC2 RF2 T1M32_T-01 Notice The circuits and measurements contained in this document are given only in the context of as examples of applications for these products. Moreover, these example application circuits are not intended for mass production, since the high-frequency characteristics (the AC characteristics) of these devices will be affected by the external components which the customer uses, by the design of the circuit and by various other conditions. It is the responsibility of the customer to design external circuits which correctly implement the intended application, and to check the characteristics of the design. TOSHIBA assume no responsibility for the integrity of customer circuit designs or applications. 4 2002-11-14 TG2213S LOSS - Pin (RFcom - RF1) 0 0.5 1 0 0.5 1 LOSS - Pin (RFcom - RF2) (dB) LOSS1 2.5 3 3.5 4 0 VC1 = 2.7 V VC2 = 0 V f = 2.5 GHz 10 20 30 LOSS2 2 (dB) 1.5 1.5 2 2.5 3 3.5 4 0 VC1 = 0 V VC2 = 2.7 V f = 2.5 GHz 10 20 30 Pin (dB) Pin (dB) ISL - Pin (RFcom - RF1) 0 VC1 = 0 V 5 VC2 = 2.7 V f = 2.5 GHz 5 0 ISL - Pin (RFcom - RF2) VC1 = 2.7 V VC2 = 0 V f = 2.5 GHz (dB) ISL1 15 ISL2 5 10 15 20 25 (dB) 10 10 15 20 20 25 0 25 0 5 10 15 20 25 Pin (dB) Pin (dB) LOSS - f (RFcom - RF1) 0 0.5 1 1.5 2 2.5 3 3.5 4 0 VC1 = 2.7 V VC2 = 0 V RF2 = 50 W 1.0 2.0 3.0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 LOSS - f (RFcom - RF2) (dB) Insertion LOSS Insertion LOSS (dB) VC1 = 0 V VC2 = 2.7 V RF1 = 50 W 1.0 2.0 3.0 Frequency (GHz) Frequency (GHz) 5 2002-11-14 TG2213S ISL - f (RFcom - RF1) 0 0 ISL - f (RFcom - RF2) 20 20 (dB) Isolation 60 VC1 = 0 V VC2 = 2.7 V RF2 = 50 W 1.0 2.0 3.0 Isolation 40 (dB) 40 60 VC1 = 2.7 V VC2 = 0 V RF1 = 50 W 1.0 2.0 3.0 80 0 80 0 Frequency (GHz) Frequency (GHz) ISL - f (RF1 - RF2) 0 0 ISL - f (RF1 - RF2) 20 20 (dB) Isolation 60 VC1 = 2.7 V VC2 = 0 V RFcom = 50 W 1.0 2.0 3.0 Isolation 40 (dB) 40 60 VC1 = 0V VC2 = 2.7 V RFcom = 50 W 1.0 2.0 3.0 80 0 80 0 Frequency (GHz) Frequency (GHz) Switching time (RAISE) Switching time (FALL) 52.7 ns 47.3 ns VC VC RF RF Time (50 ns/div) Time (50 ns/div) 6 2002-11-14 TG2213S RESTRICTIONS ON PRODUCT USE 020704EAC * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * Gallium Arsenide (GaAs) is a substance used in the products described in this document. GaAs dust or vapor is harmful to the human body. Do not break , cut, crush or dissolve chemically. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 7 2002-11-14 |
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